Electronic effect

Results: 698



#Item
21Specifications Parameter Value  OFET

Specifications Parameter Value OFET

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Source URL: www.ipms.fraunhofer.de

Language: English - Date: 2016-08-23 14:33:31
22UNIVERSITY OF CALIFORNIA Santa Barbara Sound Element Spatializer  A project report submitted in partial satisfaction

UNIVERSITY OF CALIFORNIA Santa Barbara Sound Element Spatializer A project report submitted in partial satisfaction

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Source URL: www.lifeorange.com

Language: English - Date: 2011-11-09 16:09:37
23158  IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 53, NO. 1, JANUARY 2006 A Charge-Modulated FET for Detection of Biomolecular Processes: Conception,

158 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 53, NO. 1, JANUARY 2006 A Charge-Modulated FET for Detection of Biomolecular Processes: Conception,

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Source URL: www.diee.unica.it

Language: English - Date: 2009-07-13 07:56:50
24Articles published week of 2 NOVEMBERVolume 95 Number 18 APPLI E D PHYS ICS

Articles published week of 2 NOVEMBERVolume 95 Number 18 APPLI E D PHYS ICS

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Source URL: rogers.matse.illinois.edu

Language: English - Date: 2009-11-09 07:08:38
25ANApplication Note Designing Hard-switched Bridges with GaN 1. Diode-free bridges. GaN power HEMTs are nearly ideal switches for many applications. A particular advantage in

ANApplication Note Designing Hard-switched Bridges with GaN 1. Diode-free bridges. GaN power HEMTs are nearly ideal switches for many applications. A particular advantage in

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Source URL: www.transphormusa.com

Language: English - Date: 2016-08-11 14:26:01
26Hybrid Linear Hall Effect Ics EQ-series  EQ-430L Shipped in packet-tape reel(5000pcs/Reel)

Hybrid Linear Hall Effect Ics EQ-series EQ-430L Shipped in packet-tape reel(5000pcs/Reel)

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Source URL: www.akm.com

Language: English
27AOT416 100V N-Channel MOSFET SDMOS TM General Description  Product Summary

AOT416 100V N-Channel MOSFET SDMOS TM General Description Product Summary

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Source URL: img.cecport.com

Language: English - Date: 2015-04-16 21:59:16
28TPH3212PS  PRODUCT SUMMARY (TYPICAL) VDS (V)  650

TPH3212PS PRODUCT SUMMARY (TYPICAL) VDS (V) 650

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Source URL: www.transphormusa.com

Language: English - Date: 2016-08-11 14:28:16
29TPH3202PD  PRODUCT SUMMARY (TYPICAL) VDS (V)  600

TPH3202PD PRODUCT SUMMARY (TYPICAL) VDS (V) 600

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Source URL: www.transphormusa.com

Language: English - Date: 2016-08-11 14:27:54
30ARTICLES  Ultra-sensitive NEMS-based cantilevers for sensing, scanned probe and very high-frequency applications MO LI, H. X. TANG* AND M. L. ROUKES†

ARTICLES Ultra-sensitive NEMS-based cantilevers for sensing, scanned probe and very high-frequency applications MO LI, H. X. TANG* AND M. L. ROUKES†

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Source URL: nano.caltech.edu

Language: English - Date: 2007-11-04 15:44:18